Measurement and Modeling of Silicon Heterostructure Devices
John D. Cressler
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook , this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
种类:
年:
2007
出版:
1
出版社:
CRC-Press
语言:
english
页:
200
ISBN 10:
1420066927
ISBN 13:
9781420066920
文件:
PDF, 2.81 MB
IPFS:
,
english, 2007
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